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Low-Temperature Homoepitaxial Growth of Gan Using Hyperthermal Molecular Beams

Published online by Cambridge University Press:  10 February 2011

A. Michel ,
E. Chen ,
D. Thomson ,
O. Nam ,
R. F. Davis  and
H. H. Lamb
A. Michel
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905, lamb@eos.ncsu.edu
E. Chen
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905, lamb@eos.ncsu.edu
D. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
O. Nam
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
H. H. Lamb
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905, lamb@eos.ncsu.edu
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Abstract

In situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Removal of surface carbon and oxygen contaminants was achieved by heating at 730°C under a hyperthermal NH 3 beam. Oxygen is removed primarily by thermal desorption; however, carbon removal requires an NH3 flux. Atomically smooth surfaces with regular steps are obtained after NH3 beam cleaning. Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 700°C by employing a 0.61-eV NH3 beam and an effusive Ga source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 437
Copyright
Copyright © Materials Research Society 1998

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References

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