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Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS)

Published online by Cambridge University Press:  10 February 2011

D. M. Reber  and
S. J. Fonash
D. M. Reber
Affiliation:
Currently with Networking and Computing Systems Group, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX, 78721
S. J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory (EMPRL), The Pennsylvania State University, University Park, PA 16802
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Abstract

Silicon dioxide thin films have been deposited at temperatures from 40°C to 250°C by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The properties of the PECVD TMS oxides (PETMS-Oxs) were analyzed with Fourier Transform Infrared (FTIR) transmission spectroscopy, BOE and P-etch rates and both current-voltage (I-V) and capacitance-voltage (C-V) electrical characterization. At both 130 °C and 250 °C, deposition conditions were identified which formed high quality as-deposited oxide films. Under the best conditions, unannealed Al/PETMS-Ox/c-Si capacitor structures displayed flat band voltages of Vfb = -2.5 V and breakdown fields (Vbd) in excess of 8 MV/cm. These PETMS-Ox films also show low leakage current densities <10-9 A/cm2 which can be maintained up to fields in excess of 4.5 MV/cm. The PETMS oxide electrical quality and process simplicity combine to make a very attractive oxide deposition technology for low temperature, large area applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 121
Copyright
Copyright © Materials Research Society 1998

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