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Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

Published online by Cambridge University Press:  25 February 2011

M. Hong ,
D. Vakhshoori ,
J. P. Mannaerts  and
J. Kwo
M. Hong
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. Vakhshoori
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. P. Mannaerts
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Kwo
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Very low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 287
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Sze, S. M., Physics of Semiconductor Devices, p. 305, 2nd Ed., John Wiley & Sons, Inc., 1981.Google Scholar
2 Robinson, G. Y., Physics and Chemistry of III-V Compound Semiconductor Interfaces, Ed. by Wilmsen, C. W., Plenum Press, 1985.Google Scholar
3 Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C., and Johnston, W. D. Jr., J. Appl. Phys. 67, 3754, 1990.CrossRefGoogle Scholar
4 DiLorenzo, J. V., Niehaus, W. C., and Cho, A. Y., J. Appl. Phys. 50, 951, 1979.Google Scholar
5 Goossen, K. W., Cunningham, J. E., Chiu, T. H., Miller, D. A. B., and Chemla, D. S., IEEE IEDM, 409, 1989.Google Scholar
6 Hong, M., Mannaerts, J. P., Grober, L., Chu, S. N. G., Luftman, H. S., Choquette, K. D., and Freund, R. S., J. Appl. Phys. 75, 3105, 1994.Google Scholar
7 Hong, M., Kortan, A. R., Hsieh, Y. F., and Mannaerts, J. P., unpublished results.Google Scholar
8 Brooks, R. D. and Mattes, H. G., The Bell System Journal 50, 775, 1971.Google Scholar
9 Schubert, E. F., Cunningham, J. E., Tsang, W. T., and Chiu, T. H., Appl. Phys. Lett. 49, 292, 1986.Google Scholar