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Low-Loss, Broadened-Waveguide, High-Power 2-μm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers

Published online by Cambridge University Press:  10 February 2011

R. J. Menna ,
D. Z. Garbuzov ,
R. U. Martinelli ,
H. Lee ,
P. K. York ,
J. C. Connolly  and
S. Y. Narayan
R. J. Menna
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
D. Z. Garbuzov
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
R. U. Martinelli
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
H. Lee
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
P. K. York
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
J. C. Connolly
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
S. Y. Narayan
Affiliation:
David Sarnoff Research Center, CN5300, Princeton, NJ 08543
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Abstract

(Al, In)GaAsSb/GaSb MQW lasers with a broadened waveguide have been used to fabricate 2-μm diode lasers with CW output power of 1.2 W. 2-μm linear arrays have output powers of 11 W and an efficiency of 0.13 W/A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 91
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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