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Low-Energy Deposition of High-Strength AI(O) Alloys From an ECR Plasma

Published online by Cambridge University Press:  21 February 2011

J.C. Barbour ,
D.M. Follstaedt ,
J.A. Knapp ,
D.A. Marshall ,
S.M. Myers  and
R.J. Lad
J.C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185,
D.M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185,
J.A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185,
D.A. Marshall
Affiliation:
University of Maine, Orono, ME 04469
S.M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185,
R.J. Lad
Affiliation:
University of Maine, Orono, ME 04469
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References and acknowledgments

Low-energy deposition of AI(O) alloys from an electron cyclotron resonance (ECR) plasma offers a scaleable method for the synthesis of thick, high-strength AI layers. This work compares alloy layers formed by an ECR-O2 plasma in conjunction with AI evaporation to O-implanted AI (ion energies 25–200 keV), and it examines the effects of volume fraction of AI2O3 phase and deposition temperature on the yield stress of the material. TEM showed the AI(O) alloys contain a dense dispersion of small y-AbOa precipitates (∼1 nm) in a fine-grain (10–100 nm) fee AI matrix when deposited at a temperature of ∼100°C, similar to the microstructure for gigapascal-strength O-implanted AI. Nanoindentation gave hardnesses for ECR films from 1.1 to 3.2 GPa, and finite-element modeling gave yield stresses up to 1.3 ± 0.2 GPa with an elastic modulus of 66 GPa ± 6 GPa (similar to pure bulk AI). The yield stress of a polycrystalline pure AI layer was only 0.19+0.02 GPa, which was increased to 0.87+0.15 GPa by implantation with 5 at.% O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 497
Copyright
Copyright © Materials Research Society 1996

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References

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