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Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices

Published online by Cambridge University Press:  25 February 2011

D.P. Malta ,
J.B. Posthill ,
P.M. Enquist ,
R.J. Markunas ,
T.P. Humphreys  and
N.R. Parikh
D.P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
J.B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
P.M. Enquist
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
T.P. Humphreys
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695–8202
N.R. Parikh
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

Heteroepitaxial Ge layers were grown on vicinal Si(100) by molecular beam epitaxy (MBE) at substrate temperatures of 500°C and 900°C. The layers grown at 500°C were topographically smooth with planar interfaces and a typically high threading dislocation density at the surface (> 108cm−2). Layers grown at 900°C (nucleation at 500°C) showed smooth topography, an interface highly facetted on (111) planes and a dense network of dislocations that is well confined to the interfacial region. Etch pit density measurements indicated that defect densities at the surface were as low as 1 × 105cm−2. Biaxial tensile strains of 1.2 × l0−3 and 2.5 × l0−3 were measured by Raman spectroscopy for the 500°C and 900°C layers, respectively. RBS/channeling spectra supported crosssection TEM results indicating interfacial defect confinement in the layers grown at 900°C. A model describing thermal radiation absorption suggests that interfacial Ge melting occurred during the high temperature growths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 491
Copyright
Copyright © Materials Research Society 1992

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References

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