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Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing

  • Takehito Kodzasa (a1), Sei Uemura (a1), Kouji Suemori (a1), Manabu Yoshida (a1), Satoshi Hoshino (a1), Noriyuki Takada (a1) and Toshihide Kamata (a1)...

Abstract

We have already reported that low-temperature (about 170 °C) preparation technique of silicon dioxide (SiO2) dielectric thin film that has high resistivity and extremely smooth surface by the photo oxidation process. In this paper, we have developed a low-damage preparation technique to fabricate a SiO2 thin film by the photo-assisted low temperature oxidation process in order to apply this process to the flexible electronics using for convenient plastic films. We have reported that the SiO2 dielectric thin film with a high insulation performance can be prepared by the low temperature processing below 100°C by improving the pre-processing of the photo oxidation of thin film.

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1. Kodzasa, T., et al. IDW’06 Proceedings, 881884 (2006).
2. Kodzasa, T., et al. Abstruct of 2006 MRS Spring Meeting.
3. Kodzasa, T., et al. Mater. Res. Soc. Symp. Proc. Vol. 1196, C04–04 (2010).
4. Uemura, S., et al. Mater. Res. Soc. Symp. Proc. Vol. 1113, F0925 (2009).

Keywords

Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing

  • Takehito Kodzasa (a1), Sei Uemura (a1), Kouji Suemori (a1), Manabu Yoshida (a1), Satoshi Hoshino (a1), Noriyuki Takada (a1) and Toshihide Kamata (a1)...

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