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Low Thermal Budget Techniques For Controlling Stress In Si1-XGeX Deposited At 210°C

Published online by Cambridge University Press:  01 February 2011

Sherif Sedky ,
Omar Mortagy  and
Ann Witvrouw
Sherif Sedky
Affiliation:
sedky@aucegypt.edu, The AMerican Univeristy in Cairo, Physics, 113 Kars EL Eini Street, Cairo, N/A, 11511, Egypt, + 20 10 199 64 89, + 202 795 7565
Omar Mortagy
Affiliation:
omortagy@aucegypt.edu, The American University in Cairo, The Sceince and Technology Research Center, 113 Kasr El Eini Street, Cairo, N/A, 11511, Egypt
Ann Witvrouw
Affiliation:
witvrouw@imec.be, IMEC, Kapeldreef 75, Leuven, N/A, B3001, Belgium
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Abstract

This work reports, for the first time, on the possibility of realizing surface micromachined silicon germanium structures at 210°C, which have extremely low strain gradient (μm-1). This extremely low strain gradient is obtained by tuning the physical properties of Si1-xGex, locally, without affecting the underlying layers, by excimer laser annealing. Tuning the laser annealing condition to optimize the physical properties of PECVD Si1-xGex is challenging, especially for films deposited at low temperatures (~ 250°C or lower) due to the high hydrogen content and the poor adhesion of these films. Furthermore, optimizing some properties might be at the cost of others. To clarify this issue, it is interesting to note that reducing the electrical resistivity implies using high laser pulse fluence. This however will increase mean stress, strain gradient and surface roughness as will be shown in this work.

Keywords

microelectro-mechanical (MEMS)plasma-enhanced CVD (PECVD) (chemical reaction)laser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-14
Copyright
Copyright © Materials Research Society 2006

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References

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