Skip to main content Accessibility help
×
Home

Low Temperature ZnO TFTs Fabrication with Al and AZO Contacts for Flexible Transparent Applications

  • Gerardo Gutierrez-Heredia (a1) (a2), Israel Mejia (a1), Norberto Hernandez-Como (a1), Martha E. Rivas-Aguilar (a1), Victor H. Martinez-Landeros (a1) (a2), Francisco S. Aguirre-Tostado (a2), Bruce E. Gnade (a2) and Manuel Quevedo (a1) (a2)...

Abstract

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100 °C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using ebeam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80 %.

Copyright

References

Hide All
1. Park, S-H. K., Hwang, C-S., Ryu, M., Yang, S., Byun, C., Shin, J., Lee, J-I., Oh, M. S. and Im, S., Adv. Mater.Vol.21, 6, 678682 (2009).
2. Park, C. H., Im, S., Yun, J., Lee, G. H., Lee, B. H. and Sung, M. M., Appl. Phys. Lett. Vol. 95, 223506 (2009).
3. Oh, M. S., Choi, W., Lee, K., Hwang, D. K. and Im, S., Appl. Phys. Lett. Vol. 93, 033510 (2008).
4. Shin, W.-C., Remashan, K., Jang, J.-H., Oh, M.-S. ans Park, S-J., J. Korean Phys. Soc.Vol. 55, 4, 15141518 (2009).
5. Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J. and Keszler, D. A, Appl. Phys. Lett.Vol.86, 013503 (2005).
6. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M. and Hosono, H., Nature 432, 488492 (2004).
7. Fortunato, E., Barquinha, P., Pimentel, A., Gonçalves, A., Marques, A., Pereira, L. and Martins, R., Adv. Mater. Vol. 17, 5 (2005).
8. Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., Hebard, A. F., Park, Y. D., Ren, F., Kim, J. and Boatner, L. A., J. Appl. Phys. Vol. 93, 1 (2003).
9. Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, C., Cho, S. J., and Morkoç, H., J. Appl. Phys. Vol. 98, 041301 (2005).
10. Kim, H.-K., Kim, K.-K., Park, S.-J., Seong, T.-Y. and Adesida, I., J. Appl. Phys. Vol 94, 4225 (2003).
11. Miyata, T., Ohtani, Y., Koboi, T. and Minami, T., Thin Film Solid 516, 13541358 (2008).

Keywords

Low Temperature ZnO TFTs Fabrication with Al and AZO Contacts for Flexible Transparent Applications

  • Gerardo Gutierrez-Heredia (a1) (a2), Israel Mejia (a1), Norberto Hernandez-Como (a1), Martha E. Rivas-Aguilar (a1), Victor H. Martinez-Landeros (a1) (a2), Francisco S. Aguirre-Tostado (a2), Bruce E. Gnade (a2) and Manuel Quevedo (a1) (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed