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Low Temperature Thin-film Silicon Diodes for Consumer Electronics

  • Qi Wang (a1), Scott Ward (a1), Anna Duda (a1), Jian Hua (a1), Paul Stradins (a1), Richard S. Crandall (a1), Howard M. Branz (a1), Frank Jeffrey (a2), Hao Lou (a3), Craig Perlov (a3), Warren Jackson (a3), Ping Mei (a3) and Carl Taussig (a3)...

Abstract

We have developed high current density thin-film silicon n-i-p diodes for low cost and low temperature two-dimensional diode-logic memory array applications. The diodes are fabricated at temperatures below 250°C on glass, stainless steel, and plastic substrates using hot-wire chemical vapor deposition (CVD). The 0.01-mm2 standalone diodes have a forward current-density (J) of near 10 kA/cm2 and a rectification ratio over 107 at ±2 V. The 25 μm2 array diodes have J > 104 A/cm2 and rectification of 105 at ±2V. On plastic substrates, we have also used plasma-enhanced CVD to deposit 10-μm diameter diodes with J ˜ 5 x 104 A/cm2. We found that the use of microcrystalline silicon (μc-Si) i- and nlayers results in higher current-density diodes than with amorphous silicon. Reducing the diode area increases the forward current density by lowering the voltage drop across the external series resistances. A prototype diode array memory based on 10-micron devices was successfully demonstrated by monolithically integrating diodes with a-Si:H switching elements. High current density diodes have potential applications in a variety of large area, thin-film electronic devices, in addition to a-Si:H-based memory. This could widen the application of thin-film silicon beyond its present industrial applications in thin-film transistors, solar cells, bolometers and photo-detectors.

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Low Temperature Thin-film Silicon Diodes for Consumer Electronics

  • Qi Wang (a1), Scott Ward (a1), Anna Duda (a1), Jian Hua (a1), Paul Stradins (a1), Richard S. Crandall (a1), Howard M. Branz (a1), Frank Jeffrey (a2), Hao Lou (a3), Craig Perlov (a3), Warren Jackson (a3), Ping Mei (a3) and Carl Taussig (a3)...

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