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Low Temperature Synthesis of Carbide Thin Films by Pulsed Laser Deposition (PLD)

Published online by Cambridge University Press:  28 February 2011

M. S. Donley ,
J. S. Zabinski ,
W. J. Sessler ,
V. J. Dyhouse ,
S. D. Walck  and
N. T. McDevitt
M. S. Donley
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLBT, WPAFB, OH
J. S. Zabinski
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLBT, WPAFB, OH
W. J. Sessler
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLBT, WPAFB, OH
V. J. Dyhouse
Affiliation:
Research Institute, University of Dayton, Dayton, OH
S. D. Walck
Affiliation:
SYSTRAN Corp., Linden Ave, Dayton, OH
N. T. McDevitt
Affiliation:
RAMSPEC Research, 4399 E. Mohave Dr., Dayton, OH.
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Abstract

Thin films of titanium carbide (TiC) and boron carbide (B4C) were grown by excimer pulsed laser deposition (PLD) at room temperature (RT) and 300°C. Films were deposited using the output of an excimer laser operating with KrF gas (γ = 248 nm, 15 ns pulse duration) to ablate hot-pressed targets. Film chemistry, morphology, and crystallinity were investigated. Stoichiometric, crystalline TiC films were grown on 440C stainless steel and NaCl substrates at room temperature and at 300°C. The films grown on NaCl were nanocrystalline, cubic TiC, with a grain size ranging between 2 and 10 nm in diameter. Boron carbide films were grown on silicon {100} substrates at room temperature and at 300°C. Film chemistry and stoichiometry duplicated that of the B4C target, which contained B4C and a mixed C-B-O-N binder phase. SEM analysis indicated that the morphology of the films was uniform, non-porous, and fine-grained. The films exhibited good adhesion and wear resistance, based on friction and wear data collected with a ball-on-disc tribometer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 873
Copyright
Copyright © Materials Research Society 1992

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References

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