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Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

Published online by Cambridge University Press:  01 February 2011

Stephan Warnat ,
Markus Hoefer ,
Lothar Schaefer ,
Helmut Foell  and
Peter Lange
Stephan Warnat
Affiliation:
stephan.warnat@isit.fraunhofer.de, Fraunhofer Institute for Silicon Technologies, Module Integration, Fraunhofer Strasse 1, Itzehoe, 25524, Germany
Markus Hoefer
Affiliation:
hoefer@ist.fraunhofer.de, Fraunhofer Institute for Surface Engineering and Thin Films, Braunschweig, 38108, Germany
Lothar Schaefer
Affiliation:
schaefer@ist.fraunhofer.de, Fraunhofer Institute for Surface Engineering and Thin Films, Braunschweig, 38108, Germany
Helmut Foell
Affiliation:
hf@tf.uni-kiel.de, Christian-Albrechts-University, Technical Faculty, Kiel, 24143, Germany
Peter Lange
Affiliation:
peter.lange@isit.fraunhofer.de, Fraunhofer Institute for Silicon Technology, Itzehoe, 25524, Germany
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Abstract

Silicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

Keywords

chemical vapor deposition (CVD) (deposition)infrared (IR) spectroscopypackaging
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1036: Symposium M – Materials and Hyperintegration Challenges in Next-Generation Interconnect Technology , 2007 , 1036-M03-01
Copyright
Copyright © Materials Research Society 2008

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References

[1] Matsumura, H., “Method for Depositing a Thin Film,” vol. 6,069,094, Corporation, N. and Corporation, A., Eds. USA: Hideki Matsumura, 2000, pp. 11.Google Scholar
[2] Warnat, S., Marenco, N., Kähler, D., and Reinert, W., “Design rules for post-CMOS through silicon vias in an industrial environment,” presented at 8th Electronic Packaging Technology Conference, Singapore, 2006.10.1109/EPTC.2006.342687Google Scholar
[3] Barbottin, G. and Vapaille, A., Instabilities in Silicon devices, vol. I: North-Holland, 1986.Google Scholar
[4] Matsumura, H., “Summary of research in NEDO Cat-CVD project in Japan,” Thin Solid Films, vol. 395, pp. 1–11, 2001.10.1016/S0040-6090(01)01198-1Google Scholar
[5] Lange, P., “Evidence for disorder-induced vibrational mode coupling in thin amorphous SiO2 films,” Journal of Applied Physics, vol. 66, pp. 201, 1989.Google Scholar
[6] Tsu, D. V., Lucovsky, G., and Mantini, M. J., “Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition,” Physical Review B, vol. 33, pp. 7069, 1986.10.1103/PhysRevB.33.7069Google Scholar
[7] Denisse, C. M. M., Troost, K. Z., Habraken, F. M. P. M., Weg, W. F. v. d., and Hendriks, M., “Annealing of plasma silicon oxynitride films“ Journal of Applied Physics, vol. 60, pp. 2543, 1986.Google Scholar
[8] Fuchs, E., Oppolzer, H., and Rehme, H., Particle Beam Microanalysis. Weinheim: VCH Verlagsgesellschaft, 1990.Google Scholar