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Low Temperature Si Dot Thin-Film-Transistor Memory

  • K. Nomoto (a1), D. P. Gosain (a2), T. Noguchi (a2), S. Usui (a2) and Y. Mori (a2)...

Abstract

We report a novel poly-Si-thin-film-transistor based memory with Si-nano-crystals (Si dots) floating gate fabricated on a quartz substrate at a temperature below 400°C. Novel techniques of Si-dot and tunnel-oxide formation using excimer laser annealing were performed. A preliminary device shows a threshold voltage shift larger than 1 V with 20 V, 10 ms write/erase (W/E) operation and a retention time of 103 s at room temperature. The device operates 104 W/E cycles without significant degradation.

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