Skip to main content Accessibility help
×
Home

Low Temperature Processed Metal-Semiconductor-Metal Phtodetectors on ZnSe/SI-GaAs (100)

  • Hyesook Hong (a1), Wayne A. Anderson (a1), Eunwha Lee (a1), Huicheng Chang (a1), Myunghee Na (a1) and Hong Luo (a1)...

Abstract

Low temperature (LT) processed ZnSe MSM photodetectors can be used for detecting Gamma rays or X-rays using scintillation crystals in many space and medical applications. Metalsemiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 μm, 3 μm, and 4 μm spacing on one chip. Probimide and SiO2 thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by photolithography and reactive ion etching. Pd Schottky metal was deposited at a substrate temperature near 77 K using a lift-off technique. The LT metallization provides an improved interface between metal and semiconductor interface. Continuous wave signal to noise ratio (SNR) of 1.57×104 was obtained for 2 μm interdigitated photodetectors, operated under 180 nW optical power at a wavelength of 400 nm. The detectors showed good DC saturation characteristics indicating a low surface recombination. Saturation current without illumination remained at around less than 1 pA for a ± 10 V biasing. Detectors exhibited linearity with light intensity and DC bias voltage suggesting no gain mechanism involved, and showed a high spectral responsivity (0.6 (A/W)) at a wavelength of 450 nm at 5V applied bias.

Copyright

References

Hide All
1. Soole, Julian B. D. and Schumacher, Hermann, IEEE J. Quantum Electron., vol.27, no. 3, pp. 737752 (1991)
2. Böttcher, E. H., Kuhl, D., Hieronymi, F., Dröge, E., Wolf, T., and Bimberg, D., IEEE J. Quantum Electron., vol.28, no. 10, pp. 23432357 (1992)
3. Palmer, J. W., Anderson, W. A., Hoelzer, D. T., and Thomas, M., J. Electron. Mat., 25, pp. 1645 (1996)
4. Shi, Z. Q., Wallace, R. L., and Anderson, W. A., Appl. Phys. Lett., 59, pp. 446 (1991)
5. Wang, A. Z. H., Anderson, W. A., and Haase, M. A., J. Appl. Phys., 77(7), pp. 35133518 (1995)
6. Klingenstein, M. and Kuhl, J., Sol. State. Electron. vol.37, no.2, pp. 333340 (1994)
7. Wohlmuth, W., Arafa, M., Fay, P., and Adesida, I., Appl. Phys. Lett, 70(22), pp. 30263028 (1997)
8. Chou, S.Y., Liu, M. Y., IEEE J. Quantum Electron., vol.28, no. 10, pp. 23582368 (1992)
9. Hong, H., Anderson, W. A., Nagarathnam, S., Cartwright, A., Lee, E. H., Cheng, H. C., Na, M. H., and Luo, H., IEEE 24th Inter. Comp. Semi. Symp., MC2, (1997)
10. Darling, R. B., Youn, H. J., and Kuhn, K. J., J. Light Tech., vol.10, no. 11, pp. 15971605 (1992)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed