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Low Temperature Poly-Si TFT Technology

  • T. Noguchi (a1) (a2), D.Y. Kim (a1), J.Y. Kwon (a1), K.B. Park (a1), J.S. Jung (a1), W.X. Xianyu (a1), H.X. Yin and H.S. Cho (a1)...

Abstract

Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600° down to 400°. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200° or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

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1. Morozumi, S. et al. , Digest of SID, p.156 (1983).
2. Digest of Technical papers on AM-LCD, p.7188 (2001).
3. Iverson, R.B. and Reif, R., J. Appl. Phys., 57, p.5169 (1985).
4. Noguchi, T., Hayashi, H. and Ohshima, T., Jpn. J. Appl. Phys. 28, p. 146 (1989).
5. Noguchi, T., IMID '01 DIGEST, p.731 (2001).
6. Jung, J.S., Kwon, J.Y., Park, Y.S., Cho, H.S., Park, K.B., Huaxiang, Y.X., Xianyu, W.X. and Noguchi, T., JKPS (2004). To be published. (Presented in 12th. ISPSA 04, Korea)
7. Noguchi, T., Tsukamoto, H., Suzuki, T. and Masuya, H., Extended Abstracts of the International Conference on SSDM, p.620 (1991).
8. , Noguchi and Kanaishi, Y., IEEE Ele. Dev. Lett. 10, p.543 (1989).
9. Noguchi, T., Tajima, K. and Morita, Y., Mat. Res. Soc. Symp. Proc. 146, p.35 (1989).
10. Hamada, H., Aya, Y., Abe, H., Nouda, T., Hirano, K. and Miyai, Y., Proc. of Ele. Chem. Soc., 98–22, p.11 (1998).
11. Tang, A. J., Tsai, J. A. and Reif, R., and King, T. J., IEDM 20.2.1, p.513 (1995).
12. Wang, H., Chan, M., Jager, S., Poon, V.M.C., Qin, M., Wang, Y. and Ko, P.K., IEEE Trans. Electron Dev. Lett., 47, p.1580 (2000).
13. Asano, T., Aoto, T. and Okada, Y., Jpn. J. Appl. Phys. 36, p.1415 (1997).
14. Kuriyama, H., Nohda, T., Ishida, S., Kuwahara, T., Noguchi, S., Kiyama, S., Tsuda, S. and Nakano, S., Jpn. J. Appl. Phys. 32, p.6190 (1993).
15. Noguchi, T., Tang, A. J., Tsai, J. A. and Reif, R., Mat. Res. Soc. Symp. Proc. 403, p.357 (1996).
16. Sposili, R.S., and Im, J. S., Appl. Phys. Lett. 69, p.2864 (1996).
17. Matsuo, N. and Hamada, H., Tech. Report of IEICE, ED2000-13, SDM 2000-13, p.21 (2000-2004).
18. Kim, D.Y., Park, K.B., Kwon, J.Y., Jung, J.S., Xianyu, W.X., Park, Y.S., and Noguchi, T., IMID'03 DIGEST, p.657 (2003).
19. Mariucci, L., Carluccio, R., Pecora, A., Foglietti, V., Fortunato, G., Sala, D.D., Digest of Technical papers on AM-LCD, p.283 (1999).
20. Han, M.K. and Song, I.H., Digest of Technical papers on AM-LCD, p.75 (2003).
21. Kramer, K-J.. Talwar, S., MaCarthy, A. M. and Weimer, K.H., IEEE Trans. Electron Dev. Lett. 17, p.4561 (1996).
22. Usui, S., Sameshima, T. and Hara, M., Optoelectronics Devices and Technologies 4, p.235 (1989).
23. Jang, J. and Kim, K.W., Digest of Technical papers of AM-LCD, p.235 (1999).
24. Gosain, D.P., Noguchi, T. and Usui, S., Jap. Jpn. Appl. Phys., 39, p. L179 (2000).
25. Omata, F. and Serikawa, T., Digest of Technical papers on AM-LCD'99, p.243 (1999).
26. Kim, D.Y. Cho, H.S., Park, K.B., Kwon, J.Y., Jung, J.S. and Noguchi, T., To be published in JKPS. (Presented in 12th. ISPSA 04, Korea)
27. Lee, M.C., Han, S.M., Kang, S.H., Shin, M.Y. and Han, M.K., Technical Digest of IEDM 2003, 8.7.1, p.215.
28. Young, N.D., Mcculoch, D.J. and Bunn, R.M., Digest of Technical papers on AM-LCD, p.47 (1997).
29. Asano, A. and Kinoshita, T., SID 02 DIGEST, p. 1196 (2002).
30. Utsunomiya, S., Saeki, T., Inoue, S. and Shimoda, T., Digest of Technical papers on AMLCD, p.37 (2002).

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Low Temperature Poly-Si TFT Technology

  • T. Noguchi (a1) (a2), D.Y. Kim (a1), J.Y. Kwon (a1), K.B. Park (a1), J.S. Jung (a1), W.X. Xianyu (a1), H.X. Yin and H.S. Cho (a1)...

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