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Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

  • Tsutomu Iida (a1) (a2), Yunosuke Makita (a3) (a2), Stefan Winter (a3) (a2), Shinji Kimura (a1) (a2), Yushin Tsai (a1) (a2), Yoko Kawasumi (a4) (a2), Paul Fons (a2), Akimasa Yamada (a2), Hajime Shibata (a2), Akira Obara (a2), Shigeru Niki (a2), Shin-ichiro Uekusa (a5) and Takeyo Tsukamoto (a6)...

Abstract

C-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC +) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC + for EC + lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC +. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC +=170 eV. For EC + higher than ~170 eV, increasing EC + was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC +.

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