Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-06T04:39:26.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Mahdi Farrokh Baroughi ,
Hassan G. El-Gohary ,
Cherry Y. Cheng  and
Siva Sivoththaman
Mahdi Farrokh Baroughi
Affiliation:
mfarrokh@engmail.uwaterloo.ca, South Dakota State University, Electrical Engineering and Computer Science Department, 201 Harding Hall, Box 2220, South Dakota State University, Brookings, SD, 57007, United States, 605-688-6963, 605-688-4401
Hassan G. El-Gohary
Affiliation:
helgohar@uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Cherry Y. Cheng
Affiliation:
cyycheng@uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Siva Sivoththaman
Affiliation:
sivoththaman@uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Get access

Abstract

Highly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Keywords

Siepitaxyelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-19
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wolf, S. and Tauber, R. N., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach, CA, 1986.Google Scholar
[2] Hollingsworth, R. E. and Bhat, P. K., Applied Physics Letters -- January 31, 1994 -- Volume 64, Issue 5, pp. 616–618.Google Scholar
[3] Hammal, S. and Cabarrocas, P. Rocai, Solar Energy Materials and Solar Cells, Volume 69, Number 3, October 2001, pp. 217–239(23)Google Scholar
[4] Shah, S. C., Rath, J. K., Kshirsagar, S. T., and Ray, S., J. Phys. D: Appl. Phys. vol. 30, p.p. 2686–2692, 1997 Google Scholar
[5] Lee, Czang-Ho, Striakhilev, Denis, and Nathan, Arokia, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 22, Issue 3, p.p. 991–995 Google Scholar
[6] Chen, C. H., Yew, T. R., Journal of Crystal Growth, vol. 147, p.p. 305–312, 1995 Google Scholar
[7] Varhue, W. J., Rogers, J. L., and Andry, P. S., Appl. Phys. Lett. vol. 68, p.p. 349–351, 1996.Google Scholar
[8] Kitagawa, T., Kondo, M., MatsudaKondo, A., Applied Surface Science vol. 159-160, p.p. 30–34, 2000.Google Scholar
[9] Centurioni, E., Iencinella, D., Rizzoli, R., Zignani, F., IEEE Transactions on Electron Devices, vol. 51, p.p. 1818–1824, 2004.Google Scholar
[10] Masetti, G, Severi, M, Solmi, S, Electron Devices, IEEE Transactions on Electron Devices, vol. 30, p.p. 764–769, 1983.Google Scholar
[11] Matsuda, Akihisa, Thin Solid Films, vol. 337, p.p. 1–6, 1999 Google Scholar
[12] Haji, L, Joubert, P, Stoemenos, J, Economou, NA, Journal of Applied Physics, vol. 75, p.p. 3944–3952, 1994 Google Scholar