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Low Temperature Epitaxy of Hg1−xCdxTe

Published online by Cambridge University Press:  25 February 2011

N. W. Cody ,
U. Sudarsan  and
R. Solanki
N. W. Cody
Affiliation:
Department of Applied Physics and Electrical Engineering Oregon Graduate Center, Beaverton, OR 97006-1999
U. Sudarsan
Affiliation:
Department of Applied Physics and Electrical Engineering Oregon Graduate Center, Beaverton, OR 97006-1999
R. Solanki
Affiliation:
Department of Applied Physics and Electrical Engineering Oregon Graduate Center, Beaverton, OR 97006-1999
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Abstract

Mercury cadmium telluride epitaxial layers have been grown using methylallyltelluride (MATe), dimethylcadmium (DMCd), and elemental Hg. Using these precursors high quality films have been achieved over the temperature range of 200-300°C. Comparisons are made between UV photon-assisted and thermally deposited films. Composition, growth rate, and electrical properties are compared for the two processes under various parameter conditions. Properties of films deposited on various substrates including CdTe, GaAs, and GaAs/Si are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 233
Copyright
Copyright © Materials Research Society 1989

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References

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