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Low Temperature Epitaxial Growth of NiSi2 on BF2+-Implanted (001)Si

Published online by Cambridge University Press:  25 February 2011

W.J. Chen  and
L.J. Chen
W.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Epitaxial growth of NiSi2 on BF2+-implanted (O0l)Si at low temperatures has been studied by both cross-sectional and planview transmission electron microscopy. In implanted regrown samples with a 30-nm-thick Ni layer, epilaxial NiSi2 was found to form at a temperature as low as 250 °C. The dominant phase was observed to be NiSi in samples annealed at 400-700 °C. The final structure of the silicide layer was found to depend critically on the thickness of tile starting Ni overlayer and the annealing temperature. The presence of B and/or F atoms in silicon was found to be essential for the tormation of epitaxial NiSi2 on crystalline silicon at 220-300 °C. In addition, tile amorphicity of the substrate was also found to play an important role in promoting the formation of polycrystalline NiSi2 at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 295
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1 Tu, K.N. and Mayer, J.W., in Thin Films Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978) p. 319.Google Scholar
2 Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, edited by Einspruch, N.G. and Larrabee, G.B. (Academic, New York, 1983) p. 329.CrossRefGoogle Scholar
3 Wittmer, M., Ting, C.Y., and Tu, K. N., J. Appl. Phys. 54, 699 (1983).Google Scholar
4 Ohdomari, I., Akiyama, M., Maeda, T., Hori, M., Takebayashi, C., Ogura, A., Chikyo, T., Imura, I., Yoneda, K., and Tu, K.N., J. Appl. Phys. 56, 2725 (1984).Google Scholar
5 Lu, S.W., Nieh, C.W., and Chen, L.J., Appl. Phys. Lett. 49, 1770 (1986).CrossRefGoogle Scholar
6 Murarka, S.P. and Williams, D. S., J. Vac. Sci. Technol. B5, 1674 (1987).CrossRefGoogle Scholar
7W. Lur and Chen, L.J., J. Appl. Phys. 64, 3505 (1988).Google Scholar
8W. Lur and Chen, L.J., J. Appl. Phys. 65, 3604 (1989).Google Scholar
9 Chen, L.J., Doland, C.W., Wu, I.W., Chu, J.J., and Lu, S.W., J. Appl. Phys. 62, Z789 (1987).Google Scholar
10 Chen, L.J., Doland, C.W., Wu, I.W., Chiang, A., Tsai, C.C., Chu, J.J., Lu, S.W., and Nieh, C.W., J. Electron Mater. 17, 75 (1988).Google Scholar
11 Lohner, T., Valyi, G., Mezey, G., Kotai, E., and Gyulai, J., Rad. Eff. 54, 251 (1981).Google Scholar
12 Sheng, T.T. and Chang, C.C., IEEE Trans. Electron Devices ED–23, 531 (1976).Google Scholar
13 Chen, L.J. and Wu, I.W., J. Appl. Phys. 52, 3310 (1981).Google Scholar
14 Nieh, C.W. and Chen, L.J., Appl. Phys. Lett. 48, 1528 (1986).CrossRefGoogle Scholar
15L.8. Hung and Mayer, J.W., Thin Solid Films 109, 85 (1983).Google Scholar
16 Lien, C.D., Nicolet, M.A., and Lau, S.S., Phys. Stat. Sol. (a) 81, 123 (1984).Google Scholar
17 Lien, C.D., Nicolet, M.A., and Lau, S.S., Thin Solid Films 143, 63 (1986).Google Scholar
18 Cammmarata, R.C., Thompson, C.V., and Tu, K.N., Appl. Phys. Lett. 51, 1105 (1987).CrossRefGoogle Scholar