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Low Temperature Epitaxial Growth of Al on Si( 111) and CaF2(111) Using Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

C.-C. Cho  and
H.-Y. Liu
C.-C. Cho
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265
H.-Y. Liu
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265
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Abstract

Using molecular beam epitaxy (MBE), we have grown high quality, low stress, single crystal Al on Si( 111) and CaF2(111). X-ray diffraction was used to characterize the crystalline quality, stress, and epitaxial relations of the films. AI(lll) was grown at a substrate temperature as low as 25°C on as-deposited CaF2(111) and Si(111) cleaned by either wet etching or high temperature annealing. Aluminum Film stresses, derived from deformation of the Al atomic planes, are compressive when the films are grown at low temperatures. The stress becomes tensile and increases as the growth temperature increases. Consequently, films of low stress can be achieved by choosing the appropriate growth temperature. Epitaxial relations are dependent on the growth temperature and Si substrate preparation methods. Aluminum films with crystalline orientations identical to the substrates (A type), rotated 180° about the surface normal of the substrates (B type), and mixed A and B types have been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 87
Copyright
Copyright © Materials Research Society 1991

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References

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