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Low Temperature Deposition of Zinc Oxide Films

Published online by Cambridge University Press:  01 February 2011

H. W. Lee ,
Y. G. Wang ,
S. P. Lau  and
B. K. Tay
H. W. Lee
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
Y. G. Wang
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
S. P. Lau
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
B. K. Tay
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University, 639798 Singapore.
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Abstract

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.16
Copyright
Copyright © Materials Research Society 2003

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References

1 Service, R. F., Science 276, 895 (1997).Google Scholar
2 Tang, Z. K., Wong, G. K. L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., Appl. Phys. Lett. 72, 3270 (1998).Google Scholar
3 Bagnall, D. M., Chen, Y. F., Zhu, Z., Yao, T., Shen, M. Y., and Goto, T., Appl. Phys. Lett. 73, 1038 (1998).Google Scholar
4 Siah, F., Yang, Z., Tang, Z. K., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., J. Appl. Phys. 88, 2480 (2000).Google Scholar
5 Haga, K., Katahira, F., and Watanabe, H., Thin Solid Films 343, 145 (1999).Google Scholar
6 Hachigo, A., Nakahata, H., Higaki, K., Fujii, S., and Shikata, S., Appl. Phys. Lett. 65, 2556 (1994).Google Scholar
7 Drift, A. Van der, Philips Res. Rep. 22, 267 (1967).Google Scholar
8 Igasaki, Y. and Saito, H., J. Appl. Phys. 69, 2190 (1991).Google Scholar
9 Zin, Z. C., Hamberg, I., and Granqvist, C. G., J. Appl. Phys. 64, 5117 (1988).Google Scholar
10 Selnelius, B. E., Berggren, K. F., Zin, Z. C., Hamberg, I., and Granqvist, C. G., Phys. Rev. B 37, 10 244 (1988).Google Scholar
11 Minami, T., Nanto, H., and Takata, S., Jpn. J. Appl. Phys. 1 124, L605 (1985).Google Scholar
12 Wu, X. L., Siu, G. G., Fu, C. L., and Ong, H. C., Appl. Phys. Lett. 78, 2285 (2001).Google Scholar
13 Vanheusden, K., Warren, W. L., Seager, C. H., Tallant, D. R., Voigt, J. A., and Gnade, B. E., J. Appl. Phys. 79, 7983 (1996).Google Scholar