Skip to main content Accessibility help
×
Home

Low Temperature Chemical Vapor Deposition of Titanium Dioxide Thin Films Using Tetranitratotitanium (IV)

  • D. C. Gilmer (a1), W. L. Gladfelter (a1), D. G. Colombo (a1), C. J. Taylor (a1), J. Roberts (a1), S. A. Campbell (a1), H.-S. Kim (a2), G. D. Wilk (a1) and M. A. Gribelyuk (a3)...

Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184°C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 – 500°C with a precursor vessel temperature at 22°C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 – 30 and leakage current densities as low as 10−8 Amp/cm2.

Copyright

References

Hide All
[1] Brar, B., Wilk, G. D. and Seabaugh, A. C., Appl. Phys. Lett. 69, 2728 (1996).
[2] Kim, S.-O. and Kim, H. J., J. Vac. Sci. Technol. B 12, 3006 (1994).
[3] Campbell, S. A., Gilmer, D. C, Wang, X.-C., Hsieh, M.-T., Kim, H.-S., Gladfelter, W. L. and Yan, J., IEEE Trans. Electron Devices 44, 104 (1997).
[4] Kim, H.-S., Gilmer, D. C, Campbell, S. A. and Polla, D. L., Appl. Phys. Lett. 69, 3860 (1996).
[5] Yan, J., Gilmer, D. C, Campbell, S. A., Gladfelter, W. L. and Schmid, P. G., J. Vac. Sci. Technol. B 14, 1706(1996).
[6] Hass, G., Vacuum 2, 331 (1952).
[7] Feuersanger, A. E., Proc. IEEE 52, 1463 (1964).
[8] Ghoshtagore, R. N. and Norieka, A. J., J. Electrochem. Soc. 117, 1310 (1970).
[9] Ghoshtagore, R. N., J. Electrochem. Soc. 117, 529 (1970).
[10] Fitzgibbons, E. T., Sladek, K. J. and Hartwig, W. H., J. Electrochem. Soc. 119, 735 (1972).
[11] Balog, M., Schieber, M., Patai, S. and Michman, M., J. Crystal Growth 17, 298 (1972).
[12] Takahashi, Y., Tsuda, K., Sugiyama, K., Minoura, H., Makino, D. and Tsuiki, M., J. Chem. Soc., Faraday Trans. 1 77, 1051 (1981).
[13] Fuyuki, T. and Matsunami, H., Jpn. J. Appl. Phys. 25, 1288 (1986).
[14] Fuyuki, T., Kobayashi, T. and Matsnami, H., J. Electrochem. Soc. 135, 248 (1988).
[15] Siefering, K. L. and Griffin, G. L., J. Electrochem. Soc 137, 814 (1990).
[16] Siefering, K. L. and Griffin, G. L., J. Electrochem. Soc. 137, 1206 (1990).
[17] Kamata, K., Maruyama, K., Amano, S. and Fukazawa, H., J. Mater. Sci. Lett. 9, 316 (1990).
[18] Lu, J. and Raj, R., J. Mater. Res. 6, 1913 (1991).
[19] Chang, H. L. M., You, H., Guo, J. and Lam, D. J., Appl. Surf. Sci. 48/49, 12 (1991).
[20] Lakomaa, E.-L., Haukka, S. and Suntola, T., Appl. Surf. Sci 60/61, 742 (1992).
[21] Won, T., Yoon, S. and Kim, H., J. Electrochem. Soc. 139, 3284 (1992).
[22] Chang, H. L. M., You, H., Gao, Y., Guo, J., Foster, C. M., Chiarello, R. P., Zhang, T. J. and Lam, D. J., J. Mater. Res. 7, 2495 (1992).
[23] Ritala, M., Leskelä, M., Niinistö, L. and Haussalo, P., Chem. Mater. 5, 1174 (1993).
[24] Wu, Y., Bradley, D. C. and Nix, R. M., Appl. Surf. Sci. 64, 21 (1993).
[25] Ritala, M., Leskelä, M., Nykänen, E., Soininen, P. and Niinistö, L., Thin Solid films 225, 288 (1993).
[26] Rausch, N. and Burte, E. P., J. Electrochem. Soc. 140, 145 (1993).
[27] Chen, S., Masen, M. G., Gysling, H. J., Paz-Pujalt, G. R., Blanton, T. N., Castro, T., Chen, K. M., Fictorie, C. P., Gladfelter, W. L., Franciosi, A., Cohen, P. I. and Evans, I. F., J. Vac. Sci. Technol. A 11, 2419 (1993).
[28] Chang, H. L. M., Zhang, T. J., Zhang, H., Guo, J., Kim, H. K. and Lam, D. J., J. Mater. Res. 8, 2634(1993).
[29] Yoon, Y. S., Kang, W. N., Yom, S. S., Kim, T. W., Jung, M., Park, T. H., Seo, K. Y. and Lee, J. Y., Thin Solid films 238, 12 (1994).
[30] Kim, T. W., Jung, M., Kim, H. J., Park, T. H., Yoon, Y. S., Kang, W. N., Yom, S. S. and Na, H. K., Appl. Phys. Lett. 64, 1407 (1994).
[31] Fictore, C. P., Evans, J. F. and Gladfelter, W. L., J. Vac. Sci. Technol. A 12, 1108 (1994).
[32] Aarik, J., Aidla, A., Uustare, T. and Sammelselg, V., J. Crystal Growth 148, 268 (1995).
[33] Versteeg, V. A., Avedisian, T. C. and Raj, R., J. Am. Ceram. Soc. 78, 2763 (1995).
[34] Schmeisser, M., Angew. Chem. 67, 493 (1955).
[35] Addison, C. C., Chem. Rev. 80, 21 (1980).
[36] Field, B. O. and Hardy, C. J., J. Chem. Soc. 5278 (1963).
[37] Garner, C. D. and Wallwork, S. C., J. Chem. Soc. (A) 1496 (1966).

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed