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Low Temperature Chemical Vapor Deposition of Titanium Dioxide Thin Films Using Tetranitratotitanium (IV)

  • D. C. Gilmer (a1), W. L. Gladfelter (a1), D. G. Colombo (a1), C. J. Taylor (a1), J. Roberts (a1), S. A. Campbell (a1), H.-S. Kim (a2), G. D. Wilk (a1) and M. A. Gribelyuk (a3)...


Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184°C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 – 500°C with a precursor vessel temperature at 22°C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 – 30 and leakage current densities as low as 10−8 Amp/cm2.



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