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Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study

  • J. Chaudhur (a1), K. Ignatiev (a1), J. H. Edgar (a2), Z. Y. Xie (a2) and Y. Gao (a2)...

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Highly perfect 3C-SiC thin films, on 6H-SiC deposited by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios were characterized by x-ray high resolution triple crystal diffractometry and double crystal topographic methods. The films were epitaxial with a low defect density present (mostly in the range of 107/cm2). X-ray topography revealed stacking faults, low angle grain boundaries, dislocations and inversion double positioning boundaries present in the film and substrate.

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Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study

  • J. Chaudhur (a1), K. Ignatiev (a1), J. H. Edgar (a2), Z. Y. Xie (a2) and Y. Gao (a2)...

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