Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-19T22:33:34.271Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature a-Si:H TFTs with a SiO2 Gate Insulator Deposited by Liquid Phase Deposition

Published online by Cambridge University Press:  21 March 2011

Richard B. M. Cross ,
David P. Oxley ,
Meenakshi Manhas  and
Ekkanath. M. Sankara Narayanan
Richard B. M. Cross
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
David P. Oxley
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
Meenakshi Manhas
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
Ekkanath. M. Sankara Narayanan
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
Get access

Abstract

A systematic study has been made of the influence of the deposition conditions on the properties of SiO2 grown by liquid phase deposition (LPD), and a-Si:H manufactured by plasma enhanced chemical vapour deposition (PECVD) with the novel facility of source-gas heating. It is demonstrated that LPD-SiO2 can be grown at 50°C with good dielectric properties. Material has been produced with a resistivity of 1015 &cm and a dielectric strength of 9 MVcm-1.The oxide was found to have a negative fixed oxide charge of 4 × 1011 cm−2, with a dielectric constant of 3.08 and a refractive index of 1.44. In the case of a-Si:H, pre-heating the source gases has enabled material to be grown at 125°C with a hydrogen content of ∼ 10 at%, with a predominance of monohydride bonding and a photosensitivity of ∼ 104. Inverted-staggered thin film transistors have been fabricated incorporating these films with an On/Off ratio of five orders of magnitude, a sub-threshold slope of 1.3 Vdecade−1 and a field effect mobility of 0.20 cm2V−1s−1

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.18
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kanicki, J. and Voke, N., Mat. Res. Soc. Symp. Proc, 68 167; 175 (1986)Google Scholar
2. Yeh, C-F, Chen, C-L and Linn, G-H J. of the Electro. Chem Soc. 141 (11) 3177 (1994)Google Scholar
3. Han, S. M. and Aydil, E. S. J. Appl. Phys., 83, No 4, 2172 (1998)Google Scholar
4. Koba, R. and Tressler, R. E. J. of the Electro. Chem. Soc., 135, No 1, 144 (1998)Google Scholar
5. Langford, A. A., Fleet, M. L., Nelson, B. P., Lanford, W. A. and Maley, N., Phys. Rev. B 45 13367 (1992)Google Scholar
6. Chattopadhyay, S., Sharma, S. N., Banerjee, R., Bhusari, D. M., Kshirsagar, S. T., Chen, Y. and Williamson, D. L., J. of Applied Physics 76 5208 (1994)Google Scholar
7. Tauc, J., Grigorovici, R. and Vancu, A., Physica Status Solidi 15 627 (1966)Google Scholar
8. Biullot, J. and Schmidt, M. P., Physica Status Solidi B 143 345 (1987)Google Scholar