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Low Temperature Anneal of the Divacancy in P-Type Silicon

  • M.-A. Trauwaert (a1), J. Vanhellemont (a1), H. E. Maes (a1), A.-M. Van Bavel (a2), G. Langouche (a2), A. Stesmans (a2) and P. Clauws (a3)...

Abstract

Results are reported of a Deep Level Transient Spectroscopy (DLTS) study of the conversion of the divacancy, with energy level at Ev+0.19eV, to a level at Ev+0.24eV after anneal at temperatures below its dissociation temperature (300°C). In literature both levels have been associated with the donor level of the divacancy.

Diodes processed on p-type Float Zone (FZ) and Czochralski (Cz) silicon wafers with boron concentration between 0.2 and 3E15 cm−3 are irradiated with 2 MeV electrons. Before and after anneal (200°C and 250°C) DLTS spectra are recorded to get a full electrical characterisation of the induced defects.

The observed conversion is proposed to be a gradual transformation of the divacancy to a divacancy-oxygen complex.

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