Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-19T16:24:00.963Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature (<150°C) Doping Techniques for Polysilicon TFT's

Published online by Cambridge University Press:  21 March 2011

W.S. Hong ,
J.M. Kim ,
S.H. Han ,
Y.H. Lee ,
Y.W. Kim ,
S.H. Lee  and
D.Y. Kim
W.S. Hong
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
J.M. Kim
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
S.H. Han
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
Y.H. Lee
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
Y.W. Kim
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
S.H. Lee
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
D.Y. Kim
Affiliation:
Materials and Devices Lab., Samsung Advanced Institute of Technology, Yongin-city, Kyunggi-do, Korea
Get access

Abstract

Doping of polysilicon (poly-Si) films was performed at a low temperature (<150°C), by using three different dopant incorporation methods: ion shower, dopant layer deposition and plasma immersion. All three techniques were shown to be capable of obtaining sheet resistance values that were smaller than 104 Ω/sq., which were considered to be sufficient to form good source-drain contacts. Also, a sheet resistance value that is as low as 300 Ω/sq. was demonstrated. It was found that the laser energy used for dopant activation was the major parameter to control the sheet resistance of the poly-Si films. The lowest attainable sheet resistance was not affected much by the ion dose, as long as the initial dose is higher than 1015 cm−2. The plasma immersion method was shown to be a good alternative to the ion shower, as the doping could be performed in a relatively short time without causing a structural damage to the poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.15
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tung, Y.J., Meng, X., King, T.J., Carey, P.G., Smith, P.M., Theiss, S.D., Weiss, R., Davis, G.A., and Aebi, V., SID 98 Digest, pp.887 (1998)Google Scholar
2. Mishima, Y., Takei, M., Matsumoto, N., Uematsu, T., Wakino, U., Kakeshi, T., and Okabe, M., Applied Physics Letters, 66 1 31 (1995)Google Scholar
3. Jun, J.M., Yoo, S.S., Woo, J.I., Lee, K.H., Kang, H.K., Kim, K.N., and Jang, J., Journal of the Korean Physical Society, 26 suppl.1 95 (1993)Google Scholar
4. Cheung, N.W., En, W., Gao, J., Iyer, S.S., Jones, E.C., Linder, B.P., Liu, J.B., Lu, X., Min, J. and Shieh, B., Abstracts of the 1995 International Conference on Solid State Devices and Materials, pp.351 (1995)Google Scholar
5. Park, S.C. and Jeon, D.Y., Thin Solid Films, 310 1/2 318 (1997)Google Scholar
6. Stutzmann, M., Biegelsen, D.K., and Street, R.A., Physical Review B, 35 11 5666 (1987)Google Scholar