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Low Tempeature Lateral Crystallization of Amorphous Silicon on Glass

Published online by Cambridge University Press:  01 February 2011

Leila Rezaee ,
Aarash Akhavan ,
Shamsoddin Mohajerzadeh  and
Ali Khakifirooz
Leila Rezaee
Affiliation:
leila-r@aftab.ece.ut.ac.ir
Aarash Akhavan
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran 14395–515
Shamsoddin Mohajerzadeh
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran 14395–515
Ali Khakifirooz
Affiliation:
Currently at Microsystems Technology Laboratories, Massachusetts Institute of Technology Cambridge, MA 02139, U.S.A., khaki@mtl.mit. edu
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Abstract

Low temperature lateral growth of amorphous silicon films has been achieved on thin flexible glasses using ultra-violet assisted metal-induced crystallization technique. 125μm ordinary glass substrate is sputter-coated with 1500Å chromium and a 1000Å SiN layer, respectively. 1000Å Si film was deposited using e-beam evaporation at a temperature of 350°C. Equally spaced dots of nickel pads with 140μm separation were used as seed of crystallization of a-Si layer. Crystallinity of the samples was studied using XRD, SEM and optical microscopy. Some crystallographic etchants were used to develop the crystal orientations for SEM analysis. Based on this study, a lateral growth rate of 2μm/hr is obtained at a temperature of 380°C. Activation energy of 1.4 to 1.5eV is extracted for this UV-assisted MILC process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.2
Copyright
Copyright © Materials Research Society 2002

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