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Low Stress Silicon Nitride and Polysilicon Films for Micromachining Applications

Published online by Cambridge University Press:  21 February 2011

P. A. Beck
Affiliation:
Applied Physics Department, Stanford University, Stanford CA 94305
S. M. Taylor
Affiliation:
Electrical Engineering Department, Stanford University, Stanford CA 94305
J. P. Mcvittie
Affiliation:
Electrical Engineering Department, Stanford University, Stanford CA 94305
S. T. Ahn
Affiliation:
Materials Science Department, Stanford University, Stanford CA 94305
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Abstract

Reduced stress silicon nitride and undoped, as deposited, polysilicon films have been characterized on a variety of silicon based substrates within the confines of co-fabrication compatibility of micromechanical structures with VLSI processing. Average stress and stress uniformity through the films are shown to vary with substrate parameters.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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