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Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS

  • Jing Liu (a1), Hongxiang Mo (a1) and Mehmet C. Öztürk (a1)

Abstract

In this paper, we present our recent results on nickel germanosilicide contacts formed on p+-n and n+-p junctions formed by selective deposition of in-situ doped Si1-xGex alloys. Our results show that ultra-thin, low resistivity NiSi1-xGex contacts can be formed at temperatures as low as 300°C on both boron and phosphorus doped Si1-xGex layers. Ultra-shallow junctions with excellent reverse leakage behavior and a contact resistivity ∼ of 10-8 ohm-cm2 were successfully demonstrated. The thermal stability of NiSi1-xGex was found to be limited to 500°C on p+-Si1-xGex and 600°C onn+-Si1-xGex. It was found that by inserting a thin Pt interlayer between Ni and Si1-xGex, the quality of the NiSi1-xGex contacts could be significantly improved. The Pt interlayer was found to improve the interface morphology, which was found to have a direct impact on the electrical properties of the contacts.

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[1] Öztürk, Mehmet C., Liu, Jing, Mo, Hongxiang and Pesovic, Nemaja, IEDM Technical Digest, p. 437440, 2002.
[2] Liu, Jing, Mo, Hongxiang and Öztürk, Mehmet C., MRS Proceedings, Vol.716, B10.7.
[3] Mo, Hongxiang, Liu, Jing and Öztürk, Mehmet C., MRS Proceedings, vol. 745, N4.11.
[4] Zhao, H. B., Pey, K. L., Choi, W. K., Chattopadhyay, S., Fitzgerald, E. A., Antoniadis, D. A., Lee, P. S., Journal of Applied Physics, vol. 92, No. 12, p. 214217, 2002.

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Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS

  • Jing Liu (a1), Hongxiang Mo (a1) and Mehmet C. Öztürk (a1)

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