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Low Resistance Optically Transparent Contacts to p–type GaN Using Oxidized Ni/Au and ITO for LED Application

Published online by Cambridge University Press:  17 March 2011

C. H. Lin ,
D. L. Hibbard ,
A. Au ,
H. P. Lee ,
Z. J. Dong ,
F. J. Szalkowski ,
J. Chen  and
C. Chen
C. H. Lin
Affiliation:
Department of Electrical & Computer Engineering, University of California, Irvine CA 92697
D. L. Hibbard
Affiliation:
Department of Electrical & Computer Engineering, University of California, Irvine CA 92697
A. Au
Affiliation:
Department of Electrical & Computer Engineering, University of California, Irvine CA 92697
H. P. Lee
Affiliation:
Department of Electrical & Computer Engineering, University of California, Irvine CA 92697
Z. J. Dong
Affiliation:
Alpha AXT, Monterey Park CA
F. J. Szalkowski
Affiliation:
Alpha AXT, Monterey Park CA
J. Chen
Affiliation:
Alpha AXT, Monterey Park CA
C. Chen
Affiliation:
Alpha AXT, Monterey Park CA
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Abstract

We report on a high transparency low resistance contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with indium tin oxide (NiO/Au/ITO). The NiO/Au/ITO layer shows a specific contact resistivity, c, of 1.8 × 10−3 Ωcm2 that is nearly ten times lower than conventional Ni/Au annealed under N2. Measurements on fully processed LEDs with a NiO/Au/ITO current spreading layer (CSL) show an operating voltage of around 4 V at 20 mA that is comparable to LEDs fabricated with a conventional Ni/Au CSL and a dramatic improvement over the previous ITO data. LED top surface light emission through the NiO/Au/ITO CSL is shown to be greater than that from LEDs with a conventional semi-transparent Ni/Au CSL. Taken together, these results demonstrate the feasibility of using NiO/Au/ITO as a CSL for high performance GaN LEDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G4.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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