Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-22T15:10:32.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Resistance Ohmic Contacts to n-Hg1−xCdxTe Using a HgTe Cap Layer

Published online by Cambridge University Press:  15 February 2011

Patrick W. Leech  and
Geoffrey K. Reeves
Patrick W. Leech
Affiliation:
Telecom Research Laboratories, Clayton, 3168, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
Get access

Abstract

Non-alloyed ohmic contacts of HgTe on Hg1−xCdxTe (x = 0.60) with metallisations of Ti, In and Au have been investigated. Layers of HgTe with thickness in the range from 0.1 μm to 1.0 μm were grown by organometallic epitaxy either as an abrubt or a graded junction, depending on the in-situ annealing conditions. The layer thickness and the extent of interdiffusion with the Hg1−CdxTe were determined using Rutherford backscattering spectrometry (RBS). The results have shown that an abrupt rather than a graded structure was essential in order to achieve the minimum value of specific contact resistance, ρc, of ≈5 × 10−5 Ωcm2. In addition, a critical thickness of HgTe (≥0.2 μm) was required in order to obtain a substantial reduction in ρc. For these metal/HgTe/Hg1−xCdxTe contacts, the metal Ti has produced the lowest values of ρc and greatest adhesion to the HgTe. Both of these properties have been attributed to the strong interfacial reaction of the overlayer of Ti with HgTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 109
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Leech, P.W., Reeves, G.K. and Li, Y.H. in Advanced Metallization and Processing for Semiconductor Devices and Circuits-II, edited by Katz, A., Murarka, S.P., Nissim, Y.I. and Harper, J.M. (Mat.Res.Soc.Proc. 260, San Francisco, CA 1992) pp 281–286.Google Scholar
2. Thompson, J., Mackett, P., Jenkin, G.T., Duy, T. Nguyen and Gori, P., Journal of Crystal Growth,,86 917, (1988).Google Scholar
3. Leech, P.W., J. App. Phys., 6, 1174, (1990).Google Scholar
4. Lansari, Y., Ren, J., Sheed, B., Bowers, K., Cook, J.W. Jr. and Schetzina, J.F., Appl. Phys. Letts., 61, 2554, (1992).Google Scholar
5. Davis, G.D., J.Vac.Sci.Technol., A6, 1939, (1988).CrossRefGoogle Scholar
6. Reeves, G.K. and Harrison, H.B., IEEE Electron Devices Lett., EDL–3, 111, (1982).CrossRefGoogle Scholar
7. Johnson, E.S. and Schmit, J.T., J. Electronic Materials, 6, 25, (1977).CrossRefGoogle Scholar
8. Leech, P.W. and Reeves, G.K., J.Vac.Sci.Technol., A10, 105, (1992).CrossRefGoogle Scholar
9. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts (Clarendon, Oxford, 1988), pp89–140 Google Scholar