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Low Pressure OMVPE Grown Compressive Strained Ingaas QWS Surrounded by Tensile Strained Ingaas Spacers

  • O. A. Laboutine (a1), A. G. Choo (a1), S. H. Kim (a1), N. H. Kim (a1), H. S. Park (a1), Y. J. Park (a1) and T. I. Kim (a1)...

Abstract

The photoluminescence (PL) measurement of unstrained and compressive strained InxGa1−xAs quantum wells (QWs) demonstrated that the interfaces had a roughness of 1 to 2.5 monolayers (ML). The spacer layers of tensile strained InyGa1−yAs were inserted between a compressive strained In0.7Ga0.3As QW and the InP barrier layers. PL spectra of the In0.7Ga0.3As/InyGa1−yAs/InP structures grown at 605°C became significantly narrower with increasing Ga content in the spacer layers above (1−y)=0.6. The PL line width of the In0.7Ga0.3As/In0.3Ga0.7As alternatingly strained multiple quantum well (MQW) structures gradually decreased when the number of periods and the deposition temperature increased. The structure, consisting of 4 periods grown at 635°C, exhibited a PL line width of about 4 meV which corresponded to the QW thickness fluctuation of 0.5 ML. The superlattice satellites of X-ray rocking curves of MQW structures were better defined under an envelope corresponding to the tensile strained layers.

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References

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Low Pressure OMVPE Grown Compressive Strained Ingaas QWS Surrounded by Tensile Strained Ingaas Spacers

  • O. A. Laboutine (a1), A. G. Choo (a1), S. H. Kim (a1), N. H. Kim (a1), H. S. Park (a1), Y. J. Park (a1) and T. I. Kim (a1)...

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