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Low Pressure CVD of GaN from GaCl3 and NH3

  • M. Topf (a1), S. Koynov (a2), S. Fischer (a3), I. Dirnstorfer (a3), W. Kriegseis (a3), W. Burkhardt (a3) and B.K. Meyer (a3)...

Abstract

We report on the heteroepitaxial growth of GaN from GaCl3 and NH3 on (0001) A12O3 and (0001) 6H-SiC substrates. In order to enable homogeneous growth within the entire deposition zone one has to use low process pressures in the 10-1 mbar range, where still a growth rate of ∼ 2 μm/h can be achieved. We present a simple model to describe our process and explain our observations. A comparison of GaN deposited on different substrates and with GaN buffer layers is given by low temperature Photoluminescence (PL). Furthermore, impurities are traced by secondary ion mass spectroscopy (SIMS).

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Low Pressure CVD of GaN from GaCl3 and NH3

  • M. Topf (a1), S. Koynov (a2), S. Fischer (a3), I. Dirnstorfer (a3), W. Kriegseis (a3), W. Burkhardt (a3) and B.K. Meyer (a3)...

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