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Low Energy Si Bombardment Effects on Epitaxial Si Growth

Published online by Cambridge University Press:  25 February 2011

Makoto Kitabatake  and
J. E. Greene
Makoto Kitabatake
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Moriguchi, Osaka 570, Japan
J. E. Greene
Affiliation:
Department of Materials Science and The Coordinated Science Laboratory, University of Illinois, 1101 W.Springfield, Urbana, IL 61801, USA
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Abstract

Molecular dynamics simulations were used to follow low-energy ion/surface interactions in Si MBE including kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. The simulations were carried out using the Tersoff many-body potential for Si. Irradiation events were initiated with 10 and 50 eV Si atoms incident normal to the Si(001)2xl surface at an array of points in the primitive surface unit cell. Epitaxy, exchange reactions, and defect (vacancy and interstitial) formations were observed. Quasidynamic simulations suggested that the interstitials preferentially diffuse toward the surface and are annealed out over times corresponding to monolayer deposition at typical Si MBE growth temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 211
Copyright
Copyright © Materials Research Society 1992

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