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Low Energy Ion Implantation / Deposition as a Film Synthesis and Bonding Tool

  • André Anders (a1) (a2), Simons Anders (a1) (a2), Ian G. Brown (a1) and Igor C. Ivanov (a3)

Abstract

We describe a novel means for the production of atomically-bonded thin films of a wide range of materials. The technique is a plasma and ion beam method involving synthesis of the desired surface film by plasma deposition and the simultaneous atomic mixing of the film into the substrate by low energy ion implantation from the surrounding plasma. Vacuum-arc-produced metal plasma is used for the metallic component of the film and gases can be added to form compound films. Multiple plasma generators can be used, and films of single metals, alloys, ceramics and multilayers can be formed. By repetitively pulse biasing the substrate during plasma deposition, the growing film is subjected to energetic ion bombardment, and direct and recoil ion implantation is induced. The depositing film is thereby atomically mixed to the substrate as it is formed. The films are atomically smooth, can be anywhere from a few monolayers to microns in thickness, and the interface or mixed transition zone can be tailored. Here we outline the basic plasma physics of the method and describe a number of novel surfaces which have been formed with excellent properties.

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Low Energy Ion Implantation / Deposition as a Film Synthesis and Bonding Tool

  • André Anders (a1) (a2), Simons Anders (a1) (a2), Ian G. Brown (a1) and Igor C. Ivanov (a3)

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