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Low Energy Ion Beam Modification of AlNxOy Thin Film for Insulated Gate Field Effect Transistors

  • James S. Chan (a1), Nathan W. Cheung (a1) and Kin Man Yu (a2)

Abstract

Nitrogen ion implantation was performed to enhance the nitrogen content of non-stoichiometric AlNXOY film (x < 1.0), which was prepared via reactive RF sputtering. A method called plasma immersion ion implantation (P111) was employed to perform the nitrogen implants. The implanted films were studied for changes in film composition using Rutherford Backscattering (RBS). Optical absorption behavior of the films was analyzed using a Perkin-Elmer monochrometer, and electrical characteristics were measured using both high frequency capacitance-volltage (CV) and current-voltage (IV) measurements. The implanted films were subsequently rapid thermal annealed in a nitrogen atmosphere from 550°C to 1060°C, and the resulting effects on the AlNXOY film were investigated using the aforementioned techniques.

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