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Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)
Published online by Cambridge University Press: 25 February 2011
Abstract
Low energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.
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- Research Article
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- Copyright © Materials Research Society 1990
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