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Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

D.R. Sparks ,
N.S. Alvi  and
K. Sanders
D.R. Sparks
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
N.S. Alvi
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
K. Sanders
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
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Abstract

A detailed comparison between transition metal diffusion results in silicon during rapid thermal annealing obtained in this and other studies with the diffusivity and solubility results obtained in the literature has been made. Using secondary ion mass spectroscopy, U-shaped diffusion profiles, possibly denoting amphoteric diffusion, have been noted fo Cu, Ni, and Pd in silicon during short anneals. Applications are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 385
Copyright
Copyright © Materials Research Society 1989

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References

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