Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-18T19:13:43.835Z Has data issue: false hasContentIssue false
  • English
  • Français

Longitudinal Modes in InAlGaAs/AlGaAs High-Power Laser Diodes

Published online by Cambridge University Press:  26 February 2011

B. S. Passmore ,
Y. C. Chua ,
M. O. Manasreh  and
J. W. Tomm
B. S. Passmore
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
Y. C. Chua
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
M. O. Manasreh
Affiliation:
Department of Electrical Engineering and Microelectronics and Photonics Program, University of Arkansas, Fayetteville, AR 72701
J. W. Tomm
Affiliation:
Max-Born-Institute Berlin, Max-Born St. 2A, Berlin, Germany 12489
Get access

Abstract

The emission from bias voltage driven In0.06Al0.08Ga0.86As/Al0.3Ga0.7As edge-emitting diode lasers with cavity lengths of 0.6 and 0.9 mm was measured at 290 K using a high resolution Fourier-transform infrared spectrometer. The light-current (L-I) characteristic curves showed that a threshold current of ∼ 0.5 and 0.8 A was needed to reach the stimulated emission in laser diodes with cavity lengths of 0.6 and 0.9 mm, respectively. The laser diode longitudinal modes were observed in the stimulated emission spectrum for each of the devices. These spectra enabled us to calculate the refractive index, total loss, and gain of the active region. On the other hand, the cavity length was determined by utilizing the interferogram spectrum, longitudinal modes spacing, and direct measurements of the laser dimensions. A good agreement between the cavity length values obtained from the three methods was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.8
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zachos, T. H., Ripper, J. E., IEEE J. Quantum Electron. QE-5, pp. 29–37, (1969).Google Scholar
2. Born, M. and Wolf, E., Interference and Interferometers, Principles of Optics, 6th ed. (New York, Pergamon, 1984) 256.Google Scholar
3. Hofstetter, D. and Thornton, R. L., IEEE J. Quantum Electron. 34, 1914 (1998).Google Scholar
4. Yariv, A., Optical Electronics in Modern Communications, 5th ed. (Oxford University Press, New York, 1997) pp. 189 and 581.Google Scholar
5. Kuna, L. and Uherek, F., Proc. of SPIE 4356, 291 (2001).Google Scholar
6. Mitin, V., Kochelap, V., and Stroscio, M., Quantum Heterostructures. (Cambridge University Press, New York, 1999) p. 463.Google Scholar
7. Adachi, S., J. Appl. Phys. 58, No.3, pp. R1–R29 (1985).Google Scholar
8. Klehr, A., Beister, G., Erbert, G., Klein, A., Maege, J., Rechenberg, I., Sebastian, J., Wenzel, H., and Tränkle, G., J. Appl. Phys. 90, 43 (2000).Google Scholar
9. Burkhard, H., Dinges, H. W., and Kuphal, E., J. Appl. Phys. 53, 655 (1982).Google Scholar
10. Patterson, B. D., Optical Engineering, 34, 2289 (1995).Google Scholar