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Localized States in Electron-Irradiated GaAs

  • S. D. Kouimtzi (a1), C. Melidis (a2) and C. Achtlleos (a2)

Abstract

Band tailing produced by electron irradiation of n-type GaAs at helium temperatures is studied. It has been observed that conductance in the band tailing occurs via localized states as evidenced by the observation of a conductance having a frequency dependence of the form σ⊥ωs where ≈ 1.

Sufficient degree of damage induces variable range hopping, σ ∝ exp (-b/Tl/4) in a defect band. The frequency dependence of the conductivity in this band is very weak.

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Localized States in Electron-Irradiated GaAs

  • S. D. Kouimtzi (a1), C. Melidis (a2) and C. Achtlleos (a2)

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