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Localized Crystallinity Measurement of Single-Crystal Ge on Insulator by Raman Polarization

  • K. Kato (a1) and M. Takai (a2)

Abstract

Agglomeration has occurred during zone-melting to obtain single-crystal germanium layers because of insufficient wettability between germanium and silicon-dioxide. The agglomeration could be suppressed by controlling the capping layer thickness, germanium layer thickness, and the island shape. A rotation of crystal orientation was found in the stripe shape island, which was presumably caused by the stress relieving within an island.

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