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Localization and Electric-Field Modulated Electron Spin Resonance of a Shallow Donor in Simox

  • K. Vanheusden (a1) and A. Stesmans (a1)


Low temperature electron spin resonance (ESR) measurements were carried out on a broad range of separation by implantation of oxygen (SIMOX) substrates. The post-implantation forming anneal (T 1325°C) was observed to induce a donor in the SIMOX structure, more specifically, a shallow effective mass donor in Si of axial symmetry and preferential alignment along [001], likely an oxygen-related heat-treatment donor. Controlled etching back experiments revealed that the donor defects reside in an interfacial Si layer of at least 600$$A thick at both sides of the buried oxide layer reaching a local volume density of about 1018 cm−3. In the flat band situation, the donor was observed to be in a diamagnetic, ESR non-active state. Downward sweeping of the Si energy bands near the buried oxide interfaces, relative to the Fermi level, either by in situ positive ate biasing of large area metal-oxide-silicon capacitors fabricated on the buried oxide or γ7-irradiation induced positive charging of the buried oxide, was observed to alter the ionization state of part of the donors into an ESR-active state.



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1. Papaioannou, G., Cristoloveanu, S., and Hemment, P., J. Appl. Phys. 63, 4575 (1988).
2. Vettese, F., Sicart, J., Robert, J. L., Cristoloveanu, S., and Bruel, M., J. Appl. Phys. 65, 1208 (1989).
3. Brown, G. A. and Revesz, A. G., Abstracts Electrochem. Soc. Meeting, St. Louis (1992).
4. Vanheusden, K. and Stesmans, A., J. Appl. Phys. 69, 6656 (1991).
5. Brady, F., Li, S., and Krull, W., J. Appl. Phys. 68, 6143 (1990).
6. Boesch, H., Taylor, T., and Brown, G., IEEE Trans. Nucl. Sci. 38, 1234 (1991).
7. Zvanut, M., Stahlbush, R., Carlos, W., Hughes, H., Lawrence, R., Hevey, R., and Brown, G., IEEE Trans. Nucl. Sci. 38, 1253 (1991).
8. Devine, R. A. B., Leray, J-L., and Margail, L., Appl. Phys. Lett. 59, 2275 (1991).
9. Stahlbush, R. E., Carlos, W. E., and Prokes, J. M., IEEE Trans. Nucl. Sci. 34, 1680 (1987).
10. Stesmans, A. and Vanheusden, K., to be published in Appl. Phys. Lett. (1993).
11. Stesmans, A., J. Magn. Res. 76, 14 (1988).
12. Stesmans, A., Revesz, A. G., and Hughes, H. L., J. Appl. Phys. 69, 175 (1991).
13. See, e.g., Deak, P., Snyder, L. C., and Corbett, J. W., Phys. Rev. B 45, 11612 (1992).
14. Stesmans, A., to be published in Phys. Rev. B.


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