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Localisation of Excitation in InGaN Epilayers and Quantum wells

  • Kevin Peter O'Donnell (a1)


Using a synchrotron radiation source, extended X-Ray Absorption Fine Structure (EXAFS) measurements were performed at the gallium and indium K-edges of a range of (In,Ga)N samples, grown either by MBE or MOCVD. The resulting determinations of local alloy structure, complemented in selected cases by asymmetric x-ray diffraction reciprocal space mapping (XRD-RSM), show an inequality in the “mixed cation” separations, Ga-In and In-Ga, for samples with InN content less than about 50%. This asymmetry, which increases with decreasing InN content of the layers, is related to the high luminescence efficiency of the materials through a combination of percolation and localisation of excitation on the GaN and InN sub-lattices, respectively.



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[1] For reviews of early work on InGaN, see Low-dimensional Nitride Semiconductors, 1st ed. Gil, B. (Editor), (Oxford University Press, Oxford, 2002)
[2] Davydov, V.Yu., Klochikhin, A.A., Emtsev, V.V., et al., Phys. Stat. Sol. (b) 234 787 (2002)
[3] Gurman, S.J., J. Synchrotron Radiat. 2 56 (1995)
[4] O'Donnell, K.P., Mosselmans, J.F.W., Martin, R.W., et al., J. Phys. C 13 6977 (2001)
[5] Note added in proof: an extended description of this work is available: as Kachkanov, V., O'Donnell, K.P.. Pereira, S. and Martin, R.W., Philosophical Magazine, 87 (2007) 19992017


Localisation of Excitation in InGaN Epilayers and Quantum wells

  • Kevin Peter O'Donnell (a1)


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