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Local Measurements of Surfaces Stress

Published online by Cambridge University Press:  15 February 2011

Ray D. Twesten  and
J. Murray Gibson
Ray D. Twesten
Affiliation:
University of Illinois, Department of Physics, Urbana, IL 61801, USA
J. Murray Gibson
Affiliation:
University of Illinois, Department of Physics, Urbana, IL 61801, USA Also with Department of Materials Science and Engineering
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Abstract

We have recently developed a method of local stress measurement that can be applied at the submicron level to measure differences in intrinsic stress at both free surfaces and buried interfaces. The method exploits the fact that transmission electron microscopy readily reveals local bulk strain fields produced by surface or interfacial stress differences. Using quantitative image analysis and simulation, we can determine the value of this stress difference. We have successfully applied this technique to the clean Si(111) surface during 7×7-1×1 phase coexistence and have determined the stress difference to be 30±5 meV/Å2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 263
Copyright
Copyright © Materials Research Society 1995

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References

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