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Liquid-phase Epitaxial Growth of BiFeO3 Thick Films using an Infrared Irradiation

  • Takeshi Kawae (a1), Mitsuhiro Shiomoto (a2), Hisashi Tsuda (a3), Satoru Yamada (a4), Masanori Nagao (a5), Akiharu Morimoto (a6) and Minoru Kumeda (a7)...

Abstract

Epitaxial BiFeO3 (BFO) thick films were fabricated on SrTiO3 (STO) substrates by a simple liquid-phase epitaxy (LPE) growth technique. To avoid the evaporation of Bi, in this process, we used the lid substrate. As starting materials, we used calcined powder or amorphous films deposited by pulsed laser ablation. The fabricated films were found to have a single perovskite phase and be (100)-oriented. Cube-on-cube epitaxial growth of film on the STO substrate was also confirmed by ϕ-scan measurements. The films grown on the substrate display a multigrain structure with a maximum in-plane size of approximately 100μm, and the film thickness was about 3-35 μm. The interface structure between the film and the substrate was relatively smooth. These results indicate that the proposed simple LPE technique is highly suitable for the fabrication of BFO thick films.

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