Skip to main content Accessibility help
×
Home

Liquid Phase Homoepitaxial Growth of 4H-SiC Crystals and Fabrication Techniques of Bluish-Purple Light-Emitting Diodes

  • Y. Ueda (a1), T. Nakata (a1), K. Koga (a1), Y. Matsushita (a1), Y. Fujikawa (a1), T. Uetani (a1), T. Yamaguchi (a1) and T. Niina (a1)...

Abstract

4H-SiC single crystals have been fabricated on the seeds of 6H-type crystals by the vacuum-sublimation (modified Lely) method at a temperature of 2400 °C and under a pressure of 2–60 mbar in an argon atmosphere. Liquid phase epitaxy was attempted by using a dipping method with a 4H-SiC off-orientation substrate whose {0001} C-face varied toward the <1120> direction by 5 degrees. The polytype of the grown crystals was found to be the 4H-type through measurements of Raman scattering and photoluminescence. P-n junction diodes were epitaxially obtained on 4H-SiC substrates. Aluminum and nitrogen were doped as acceptors and donors, respectively. The LED emitted bluish-purple light with a high brightness of 2.2 mcd at a forward current of 20 mA. Other characteristics were as follows : 420–425 nm peak wavelength, 90 % color purity, and a light output of 4 μW.

Copyright

References

Hide All
1. Suzuki, A., Ikeda, M., Nagao, N., Matunami, H. and Tanaka, T., J. Appl. Phys. 47 (10), 4546 (1976).
2. Matsunami, H., Ikeda, M., Suzuki, A. and Tanaka, T., IEEE Trans. Electron Devices ED–24, 958 (1977).
3. Nakata, T., Koga, K., Matsushita, Y., Ueda, Y. and Niina, T., Proc. 2nd Int. Conf. Amorphous and Crystalline Silicon Carbide and Related Materials (1988) in preparation for publication.
4. Tairov, Yu.M. and Tsvetkov, V.F., J. Cryst. Growth 52, 146 (1981).
5. Ziegler, G., Lanig, P., Theis, D. and Weyrich, C., IEEE Trans. Electron Devices ED–30, 277 (1983).
6. Koga, K., Nakata, T. and Niina, T., Ext. Abstr. 17th Conf. SSDM, 249 (1985).
7. Glasow, P.A., in Amorphous and Crystalline Silicon Carbide and Related Materials, edited by Harris, G.L. and Yang, C.Y.-W. (Springer Proc. in Phys. 34, pp. 13–33.
8. Koga, K., Nakata, T., Ueda, Y., Matsushita, Y., Fujikawa, Y., Uetani, T. and Niina, T., Ext. Abstr. 176th Society Meeting of the Electrochemical Society, 89, (2), 689 (1989).
9. Dmitriev, V.A., Kogan, L.M., Morozenko, Ya.V., Tsarenkov, B.V. and Cherenkov, A.E., Sov. Phys. Semicond. 23, (1), 23 (1989).
10. Matsushita, Y., Ueda, Y., Nakata, T. and Niina, T., Ext. Abstr. 17th Conf. SSDM, 253(1985).
11. Hagen, S.H., van Kemenade, A.W.C. and van der Does de Bye, J.A.W., J. Lumin. 8, 18 (1973).
12. Ikeda, M., Matsunami, H. and Tanaka, T., Phys. Rev. B 22, 2842 (1980).
13. Ikeda, M., Hayakawa, T., Yamagiwa, S., Matsunami, H. and Tanaka, T., J. Appl.Phys. 50, 8215 (1979).

Liquid Phase Homoepitaxial Growth of 4H-SiC Crystals and Fabrication Techniques of Bluish-Purple Light-Emitting Diodes

  • Y. Ueda (a1), T. Nakata (a1), K. Koga (a1), Y. Matsushita (a1), Y. Fujikawa (a1), T. Uetani (a1), T. Yamaguchi (a1) and T. Niina (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed