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Liquid Phase Epitaxy of Na1−yKyTa1−xNbxO3 for Pyroelectric Applications

Published online by Cambridge University Press:  15 February 2011

Z. Sitar
Affiliation:
ETH Zürich, Institute of Quantum Electronics, Nonlinear Optics Laboratory HPT E4, CH-8093 Zürich, Switzerland
R. Gutmann
Affiliation:
ETH Zürich, Institute of Quantum Electronics, Nonlinear Optics Laboratory HPT E4, CH-8093 Zürich, Switzerland
H. Pierhöfer
Affiliation:
ETH Zürich, Institute of Quantum Electronics, Nonlinear Optics Laboratory HPT E4, CH-8093 Zürich, Switzerland
P. Günter
Affiliation:
ETH Zürich, Institute of Quantum Electronics, Nonlinear Optics Laboratory HPT E4, CH-8093 Zürich, Switzerland
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Abstract

The epitaxial growth of para- and ferroelectric KTa1−xNbxO3 (KTN) thin films was achieved in an in-house built liquid phase epitaxy (LPE) apparatus. Films were grown from a KF/NaF/KTN solution on KTaO3 substrates. Growth rates of several μ/min were achieved at a growth temperature of 1200 K. Up to 150 μm thick, smooth KTN films with different compositions were grown and characterized. Almost perfect lattice matching was achieved by the addition of NaF to the KF flux. Partial replacement of K by Na did not result in a significant change of physical properties of KTN.

The investigation of the dielectric properties revealed a sharp change of the dielectric constant at the ferroelectric phase transition. The ferroelectric domain structure was modified by poling at 1kV/cm. Pyroelectric studies yielded a pyroelectric coefficient of up to 5.2 mC/m2K while the frequency dependence of the pyroelectric response showed a maximum at 230 Hz.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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