High quality lanthanum doped PZT films were deposited on platinum coated silicon wafers by direct liquid injection MOCVD using lead bis-tetramethylheptadione, lanthanum tri-tetramethylheptadione, zirconium tetramethylheptadione, and titanium ethoxide as precursors. The films were deposited at 650°C and a reduced pressure of 5 Torr. The deposition rates were higher than 10 nm/min. The liquid delivery system led to highly reproducible deposition rate, composition, and ferroelectric properties in the PLZT films. The remanent polarization of the films decreased from about 25 μC/cm2 for PLZT(0/55/45) to about 12 μC/cm2 for PLZT(8/55/45). The coercive field of the films seemed to be independent on the La doping concentration up to 8% La doping.