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Light-Excited Structural Instability of a-Si:H

Published online by Cambridge University Press:  10 February 2011

G.L. Kong ,
D.L. Zhang ,
G.Z. Yue ,
Y.Q. Wang  and
X.B. Liao
G.L. Kong
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China, ams@mlnmi.cnc.ac.cn
D.L. Zhang
Affiliation:
Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing, 100080, China, zhangdl@aphy01.iphy.ac.cn
G.Z. Yue
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China, ams@mlnmi.cnc.ac.cn
Y.Q. Wang
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China, ams@mlnmi.cnc.ac.cn
X.B. Liao
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China, ams@mlnmi.cnc.ac.cn
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Abstract

With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 697
Copyright
Copyright © Materials Research Society 1998

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References

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