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Light Induced Changes in PIN Solar Cells: Beyond the Staebler-Wronski Effect

  • Ka-Hyun Kim (a1) (a2), Erik V. Johnson (a2), Samir Kasouit (a1) and Pere Roca i Cabarrocas (a2)

Abstract

Hydrogenated polymorphous silicon (pm-Si:H) is one of the most promising candidates for a stable top cell material in multi-junction thin film solar cells. Solar cells using pm-Si:H as their absorbing layer show very interesting degradation kinetics when compared to hydrogenated amorphous silicon (a-Si:H), summarized by macroscopic structural changes and irreversible changes in solar cell characteristics, while nevertheless preserving a higher stabilized efficiency. Notably, pm-Si:H solar cells, once degraded, respond to neither annealing nor further light-soaking. Such results suggest a device degradation mechanism including structural changes, active hydrogen motion, and interface delamination mediated by fast hydrogen diffusion and accumulation at the interface. Interestingly, a similar behavior was reported for a-Si:H solar cells under severe light soaking conditions (at 350 °C or under 50 suns) while pm-Si:H solar cells show such behavior under 1 sun at 40 °C.

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Light Induced Changes in PIN Solar Cells: Beyond the Staebler-Wronski Effect

  • Ka-Hyun Kim (a1) (a2), Erik V. Johnson (a2), Samir Kasouit (a1) and Pere Roca i Cabarrocas (a2)

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